IPI80N03S4L03AKSA1

new-10%

Manufacturer part number:IPI80N03S4L03AKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 80A TO262-3

Case Package:SOT-23

Datasheet:IPI80N03S4L03AKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount	NO
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2007
Series	OptiMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	ULTRA LOW RESISTANCE
HTS Code	8541.29.00.95
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Power Dissipation-Max	136W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	136W
Turn On Delay Time	14 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2.7m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	2.2V @ 90μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	9750pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	140nC @ 10V
Rise Time	9ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	13 ns
Turn-Off Delay Time	62 ns
Continuous Drain Current (ID)	80A
Gate to Source Voltage (Vgs)	16V
Max Dual Supply Voltage	30V
Drain-source On Resistance-Max	0.0027Ohm
Drain to Source Breakdown Voltage	30V
Avalanche Energy Rating (Eas)	260 mJ
Height	9.45mm
Length	10.36mm
Width	4.52mm
RoHS Status	RoHS Compliant