Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IPI80N04S2H4AKSA1

IPI80N04S2H4AKSA1

IPI80N04S2H4AKSA1

Infineon Technologies

MOSFET N-CH 40V 80A TO262-3

SOT-23

IPI80N04S2H4AKSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series OptiMOS™
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 300W Tc
Turn On Delay Time 23 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 148nC @ 10V
Rise Time 63ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 46 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 20V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News