IPI80N06S4L05AKSA2

new-10%

Manufacturer part number:IPI80N06S4L05AKSA2

Manufacturer:Infineon Technologies

Description:MOSFET N-CH TO262-3

Case Package:SOT-23

Datasheet:IPI80N06S4L05AKSA2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2009
Series	Automotive, AEC-Q101, OptiMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	107W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	8.5m Ω @ 40A, 4.5V
Vgs(th) (Max) @ Id	2.2V @ 60μA
Input Capacitance (Ciss) (Max) @ Vds	8180pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Continuous Drain Current (ID)	80A
Max Dual Supply Voltage	60V
Drain-source On Resistance-Max	0.0048Ohm
Pulsed Drain Current-Max (IDM)	320A
Avalanche Energy Rating (Eas)	152 mJ
RoHS Status	RoHS Compliant