IPW60R037P7XKSA1

new-10%

IPW60R037P7XKSA1

Manufacturer part number:IPW60R037P7XKSA1

Manufacturer:Infineon Technologies

Description:IPW60R037P7XKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IPW60R037P7XKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mounting Type	Through Hole
Package / Case	TO-247-3
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2014
Series	CoolMOS™ P7
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	255W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	255W
Case Connection	DRAIN
Turn On Delay Time	22 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	37m Ω @ 29.5A, 10V
Vgs(th) (Max) @ Id	4V @ 1.48mA
Input Capacitance (Ciss) (Max) @ Vds	5243pF @ 400V
Current - Continuous Drain (Id) @ 25°C	76A Tc
Gate Charge (Qg) (Max) @ Vgs	121nC @ 10V
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Turn-Off Delay Time	90 ns
Continuous Drain Current (ID)	76A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.037Ohm
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	280A
Avalanche Energy Rating (Eas)	295 mJ
Max Junction Temperature (Tj)	150°C
Height	25.4mm
RoHS Status	ROHS3 Compliant