IPL65R660E6AUMA1

new-10%

Manufacturer part number:IPL65R660E6AUMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 4VSON

Case Package:SOT-23

Datasheet:IPL65R660E6AUMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	4-PowerTSFN
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	CoolMOS™ E6
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	2A (4 Weeks)
Number of Terminations	4
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	63W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	63W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	660m Ω @ 2.1A, 10V
Vgs(th) (Max) @ Id	3.5V @ 200μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	440pF @ 100V
Current - Continuous Drain (Id) @ 25°C	7A Tc
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	7A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	650V
Drain-source On Resistance-Max	0.66Ohm
RoHS Status	RoHS Compliant
Lead Free	Contains Lead