SIJ458DP-T1-GE3

new-10%

Manufacturer part number:SIJ458DP-T1-GE3

Manufacturer:Vishay Siliconix

Description:VISHAY - SIJ458DP-T1-GE3 - MOSFET,N CH,DIODE,30V,60A,PPAKSO8L

Case Package:SOT-23

Datasheet:SIJ458DP-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
JESD-30 Code	R-PSSO-G4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	5W Ta 69.4W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	5W
Case Connection	DRAIN
Turn On Delay Time	38 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2.2m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4810pF @ 15V
Current - Continuous Drain (Id) @ 25°C	60A Tc
Gate Charge (Qg) (Max) @ Vgs	122nC @ 10V
Rise Time	44ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	24 ns
Turn-Off Delay Time	49 ns
Continuous Drain Current (ID)	60A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	35.5A
Drain-source On Resistance-Max	0.0022Ohm
DS Breakdown Voltage-Min	30V
Nominal Vgs	1 V
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant