IPP024N06N3GXKSA1

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Manufacturer part number:IPP024N06N3GXKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 60V 120A TO220-3

Case Package:SOT-23

Datasheet:IPP024N06N3GXKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	250W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	41 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.4m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 196μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	23000pF @ 30V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	275nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Turn-Off Delay Time	79 ns
Continuous Drain Current (ID)	120A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	60V
Drain-source On Resistance-Max	0.0024Ohm
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	480A
Height	15.65mm
Length	10mm
Width	4.4mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free