IPP045N10N3GHKSA1

new-10%

Manufacturer part number:IPP045N10N3GHKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 100V 100A TO220-3

Case Package:SOT-23

Datasheet:IPP045N10N3GHKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Supplier Device Package	PG-TO220-3
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2011
Series	OptiMOS™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	214W Tc
Turn On Delay Time	27 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	3.5V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	8410pF @ 50V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	117nC @ 10V
Rise Time	59ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	14 ns
Turn-Off Delay Time	48 ns
Continuous Drain Current (ID)	100A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Input Capacitance	8.41nF
Drain to Source Resistance	4.2mOhm
Rds On Max	4.5 mΩ
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free