IPP04N03LA

new-10%

Manufacturer part number:IPP04N03LA

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 25V 80A TO-220AB

Case Package:SOT-23

Datasheet:IPP04N03LA Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2003
Series	OptiMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Voltage - Rated DC	25V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	80A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	107W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	107W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.2m Ω @ 55A, 10V
Vgs(th) (Max) @ Id	2V @ 60μA
Input Capacitance (Ciss) (Max) @ Vds	3877pF @ 15V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	32nC @ 5V
Rise Time	4.5ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	5.4 ns
Turn-Off Delay Time	38 ns
Continuous Drain Current (ID)	80A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0067Ohm
Drain to Source Breakdown Voltage	25V
Pulsed Drain Current-Max (IDM)	385A
Avalanche Energy Rating (Eas)	290 mJ
RoHS Status	RoHS Compliant
Lead Free	Contains Lead