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IRF3704ZLPBF

IRF3704ZLPBF

IRF3704ZLPBF

Infineon Technologies

MOSFET N-CH 20V 67A TO-262

SOT-23

IRF3704ZLPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Supplier Device Package TO-262
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Current Rating 67A
Number of Elements 1
Power Dissipation-Max 57W Tc
Element Configuration Single
Power Dissipation 57W
Turn On Delay Time 8.9 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.9mOhm @ 21A, 10V
Vgs(th) (Max) @ Id 2.55V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1220pF @ 10V
Current - Continuous Drain (Id) @ 25°C 67A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V
Rise Time 38ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.2 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 67A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 20V
Input Capacitance 1.22nF
Drain to Source Resistance 11.1mOhm
Rds On Max 7.9 mΩ
Height 9.65mm
Length 10.668mm
Width 4.826mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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