IPD110N12N3GBUMA1

new-10%

Manufacturer part number:IPD110N12N3GBUMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 120V 75A 3-Pin(2+Tab) TO-252

Case Package:SOT-23

Datasheet:IPD110N12N3GBUMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	OptiMOS™
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	2
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	136W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	136W
Case Connection	DRAIN
Turn On Delay Time	16 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	11m Ω @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 83μA
Input Capacitance (Ciss) (Max) @ Vds	4310pF @ 60V
Current - Continuous Drain (Id) @ 25°C	75A Tc
Gate Charge (Qg) (Max) @ Vgs	65nC @ 10V
Drain to Source Voltage (Vdss)	120V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	24 ns
Continuous Drain Current (ID)	75A
Gate to Source Voltage (Vgs)	20V
Pulsed Drain Current-Max (IDM)	300A
RoHS Status	RoHS Compliant
Lead Free	Lead Free