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IRF7322D1TR

IRF7322D1TR

IRF7322D1TR

Infineon Technologies

MOSFET P-CH 20V 5.3A 8-SOIC

SOT-23

IRF7322D1TR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Supplier Device Package 8-SO
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series FETKY™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2W Ta
FET Type P-Channel
Rds On (Max) @ Id, Vgs 62mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 780pF @ 15V
Current - Continuous Drain (Id) @ 25°C 5.3A Ta
Gate Charge (Qg) (Max) @ Vgs 29nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.7V 4.5V
Vgs (Max) ±12V
FET Feature Schottky Diode (Isolated)
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price

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