IRFS3306PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRFS3306PBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2005
Series
HEXFET®
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Resistance
4.2MOhm
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Current Rating
160A
Number of Elements
1
Power Dissipation-Max
230W Tc
Element Configuration
Single
Power Dissipation
230mW
Turn On Delay Time
15 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
4.2m Ω @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds
4520pF @ 50V
Current - Continuous Drain (Id) @ 25°C
120A Tc
Gate Charge (Qg) (Max) @ Vgs
120nC @ 10V
Rise Time
46ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
77 ns
Turn-Off Delay Time
40 ns
Continuous Drain Current (ID)
160A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
60V
Recovery Time
31 ns
Height
2.39mm
Length
6.73mm
Width
6.22mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.10000
$3.1
10
$2.80800
$28.08
100
$2.28760
$228.76
500
$1.81398
$906.99
IRFS3306PBF Product Details
Description
A HEXFET? Power MOSFET is the IRFS3306PBF. This HEXFET? Power MOSFET is specifically intended for Automotive applications and uses the newest processing techniques to provide incredibly low on-resistance per silicon area. A 175°C junction working temperature, quick switching speed, and increased repeating avalanche rating are all included in this design. These characteristics combine to make this design a very efficient and dependable device for usage in automotive and other applications.
Features
● Ruggedness of the gate, avalanche, and dynamic dV/dt
● Capacitance and Avalanche SOA with Complete Characterization
● dV/dt and dI/dt capability of body diodes improved
● Lead-Free
● Halogen-Free, RoHS Compliant
Applications
● Synchronous Rectification for SMPS with High Efficiency
● Power Supply That Doesn't Go Down
● Power Switching at a High Speed
● Circuits that are Hard-switched and Operate at a High Frequency