Description
A HEXFET? Power MOSFET is the IRFS3306PBF. This HEXFET? Power MOSFET is specifically intended for Automotive applications and uses the newest processing techniques to provide incredibly low on-resistance per silicon area. A 175°C junction working temperature, quick switching speed, and increased repeating avalanche rating are all included in this design. These characteristics combine to make this design a very efficient and dependable device for usage in automotive and other applications.
Features
● Ruggedness of the gate, avalanche, and dynamic dV/dt
● Capacitance and Avalanche SOA with Complete Characterization
● dV/dt and dI/dt capability of body diodes improved
● Lead-Free
● Halogen-Free, RoHS Compliant
Applications
● Synchronous Rectification for SMPS with High Efficiency
● Power Supply That Doesn't Go Down
● Power Switching at a High Speed
● Circuits that are Hard-switched and Operate at a High Frequency
● Switching Applications
