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IRFS3306PBF

IRFS3306PBF

IRFS3306PBF

Infineon Technologies

IRFS3306PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRFS3306PBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2005
Series HEXFET®
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Resistance 4.2MOhm
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Current Rating 160A
Number of Elements 1
Power Dissipation-Max 230W Tc
Element Configuration Single
Power Dissipation 230mW
Turn On Delay Time 15 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.2m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 4520pF @ 50V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Rise Time 46ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 77 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 160A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Recovery Time 31 ns
Height 2.39mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.10000 $3.1
10 $2.80800 $28.08
100 $2.28760 $228.76
500 $1.81398 $906.99
IRFS3306PBF Product Details

Description


A HEXFET? Power MOSFET is the IRFS3306PBF. This HEXFET? Power MOSFET is specifically intended for Automotive applications and uses the newest processing techniques to provide incredibly low on-resistance per silicon area. A 175°C junction working temperature, quick switching speed, and increased repeating avalanche rating are all included in this design. These characteristics combine to make this design a very efficient and dependable device for usage in automotive and other applications.



Features


● Ruggedness of the gate, avalanche, and dynamic dV/dt

● Capacitance and Avalanche SOA with Complete Characterization

● dV/dt and dI/dt capability of body diodes improved

● Lead-Free

● Halogen-Free, RoHS Compliant



Applications


● Synchronous Rectification for SMPS with High Efficiency

● Power Supply That Doesn't Go Down

● Power Switching at a High Speed

● Circuits that are Hard-switched and Operate at a High Frequency

● Switching Applications


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