IPP062NE7N3GXKSA1

new-10%

Manufacturer part number:IPP062NE7N3GXKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 75V 80A TO220-3

Case Package:SOT-23

Datasheet:IPP062NE7N3GXKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2011
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	136W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	136W
Turn On Delay Time	11 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	6.2m Ω @ 73A, 10V
Vgs(th) (Max) @ Id	3.8V @ 70μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	3840pF @ 37.5V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	55nC @ 10V
Rise Time	48ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	24 ns
Continuous Drain Current (ID)	80A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	75V
Drain-source On Resistance-Max	0.0062Ohm
Pulsed Drain Current-Max (IDM)	320A
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free