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FDD8453LZ

FDD8453LZ

FDD8453LZ

ON Semiconductor

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 6.7m Ω @ 15A, 10V ±20V 3515pF @ 20V 64nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

SOT-23

FDD8453LZ Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 8 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.37mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 6.7MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Base Part Number FDD8453
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 3.1W Ta 65W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.1W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.7m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3515pF @ 20V
Current - Continuous Drain (Id) @ 25°C 16.4A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
Rise Time 6ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 37 ns
Continuous Drain Current (ID) 16.4A
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 50A
Drain to Source Breakdown Voltage 40V
Height 2.39mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.61842 $1.23684
5,000 $0.58921 $2.94605
12,500 $0.56834 $6.82008
FDD8453LZ Product Details

FDD8453LZ Description

This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been specially tailored to minimize the on-state resistance and switching loss. G-S Zener has been added to enhance the ESD voltage level.



FDD8453LZ Features

Max rDs(on)= 6.7mQatVcs= 10V, lp= 15A

Max rDs(on)= 8.7mQ at VGs=45V, lo= 13A

HBM ESD protection level >7kV typical (Note 4)

RoHS Compliant



FDD8453LZ Applications

Inverter

Synchronous Rectifier



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