FCA35N60

new-10%

Manufacturer part number:FCA35N60

Manufacturer:ON Semiconductor

Description:MOSFET (Metal Oxide) N-Channel Tube 98m Ω @ 17.5A, 10V ±30V 6640pF @ 25V 181nC @ 10V 600V TO-3P-3, SC-65-3

Case Package:SOT-23

Datasheet:FCA35N60 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Weight	6.401g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	SuperFET™
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	312.5W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	312.5W
Turn On Delay Time	34 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	98m Ω @ 17.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6640pF @ 25V
Current - Continuous Drain (Id) @ 25°C	35A Tc
Gate Charge (Qg) (Max) @ Vgs	181nC @ 10V
Rise Time	120ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	73 ns
Turn-Off Delay Time	105 ns
Continuous Drain Current (ID)	35A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.098Ohm
Drain to Source Breakdown Voltage	650V
Pulsed Drain Current-Max (IDM)	105A
Avalanche Energy Rating (Eas)	1455 mJ
Height	20.1mm
Length	15.8mm
Width	5mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant