IPP075N15N3GXKSA1

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Manufacturer part number:IPP075N15N3GXKSA1

Manufacturer:Infineon Technologies

Description:MOSFET (Metal Oxide) N-Channel Tube 7.5m Ω @ 100A, 10V ±20V 5470pF @ 75V 93nC @ 10V TO-220-3

Case Package:SOT-23

Datasheet:IPP075N15N3GXKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	OptiMOS™
Published	2008
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	300W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Turn On Delay Time	25 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7.5m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 270μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	5470pF @ 75V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	93nC @ 10V
Rise Time	35ns
Drive Voltage (Max Rds On,Min Rds On)	8V 10V
Vgs (Max)	±20V
Fall Time (Typ)	14 ns
Turn-Off Delay Time	46 ns
Continuous Drain Current (ID)	100A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	150V
Drain-source On Resistance-Max	0.0075Ohm
Pulsed Drain Current-Max (IDM)	400A
Avalanche Energy Rating (Eas)	780 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free