Name: IPP120N20NFDAKSA1
Brand: Infineon Technologies
SKU: IPP120N20NFDAKSA1
Price: 7.96000 USD
Availability: InStock

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IPP120N20NFDAKSA1

Manufacturer part number:IPP120N20NFDAKSA1

Manufacturer:Infineon Technologies

Description:MOSFET (Metal Oxide) N-Channel Tube 12m Ω @ 84A, 10V ±20V 6650pF @ 100V 87nC @ 10V TO-220-3

Case Package:SOT-23

Datasheet:IPP120N20NFDAKSA1 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	6.000006g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	OptiMOS™
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Reach Compliance Code	not_compliant
Number of Elements	1
Power Dissipation-Max	300W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Case Connection	DRAIN
Turn On Delay Time	13 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	12m Ω @ 84A, 10V
Vgs(th) (Max) @ Id	4V @ 270μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	6650pF @ 100V
Current - Continuous Drain (Id) @ 25°C	84A Tc
Gate Charge (Qg) (Max) @ Vgs	87nC @ 10V
Rise Time	10ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	24 ns
Continuous Drain Current (ID)	84A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	200V
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead

IPP120N20NFDAKSA1 Product Details

IPP120N20NFDAKSA1 Description

IPP120N20NFDAKSA1 is a type of OptiMOS?FD power transistor provided by Infineon Technologies based on advanced technology for hard commutation ruggedness. it is able to provide excellent manufacturing reproducibility based on its extremely low on-resistance RDS (on) and wide safe operating area SOA.