IPP120N20NFDAKSA1

new-10%

Manufacturer part number:IPP120N20NFDAKSA1

Manufacturer:Infineon Technologies

Description:MOSFET (Metal Oxide) N-Channel Tube 12m Ω @ 84A, 10V ±20V 6650pF @ 100V 87nC @ 10V TO-220-3

Case Package:SOT-23

Datasheet:IPP120N20NFDAKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	6.000006g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	OptiMOS™
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Reach Compliance Code	not_compliant
Number of Elements	1
Power Dissipation-Max	300W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Case Connection	DRAIN
Turn On Delay Time	13 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	12m Ω @ 84A, 10V
Vgs(th) (Max) @ Id	4V @ 270μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	6650pF @ 100V
Current - Continuous Drain (Id) @ 25°C	84A Tc
Gate Charge (Qg) (Max) @ Vgs	87nC @ 10V
Rise Time	10ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	24 ns
Continuous Drain Current (ID)	84A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	200V
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead