Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	OptiMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOGIC LEVEL COMPATIBLE
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	58W Tc
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	7 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	11.1m Ω @ 45A, 10V
Vgs(th) (Max) @ Id	2V @ 85μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	3770pF @ 25V
Current - Continuous Drain (Id) @ 25°C	45A Tc
Gate Charge (Qg) (Max) @ Vgs	55nC @ 10V
Rise Time	3ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	+5V, -16V
Fall Time (Typ)	14 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	45A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	5V
Max Dual Supply Voltage	-30V
Drain-source On Resistance-Max	0.0111Ohm
Pulsed Drain Current-Max (IDM)	180A
Avalanche Energy Rating (Eas)	110 mJ
RoHS Status	RoHS Compliant
Lead Free	Contains Lead

IPP45P03P4L11AKSA1

Related Part Number