PSMN2R0-30YLDX Overview

The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 397 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2969pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).Peak drain current is 793A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 30V.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

PSMN2R0-30YLDX Features

the avalanche energy rating (Eas) is 397 mJ
a continuous drain current (ID) of 100A
based on its rated peak drain current 793A.
a 30V drain to source voltage (Vdss)

PSMN2R0-30YLDX Applications

There are a lot of Nexperia USA Inc.
PSMN2R0-30YLDX applications of single MOSFETs transistors.

• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies