IXTQ26P20P

new-10%

Manufacturer part number:IXTQ26P20P

Manufacturer:IXYS

Description:MOSFET P-CH 200V 26A TO-3P

Case Package:SOT-23

Datasheet:IXTQ26P20P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2007
Series	PolarP™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	PURE TIN
Additional Feature	AVALANCHE RATED
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	300W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	170m Ω @ 13A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2740pF @ 25V
Current - Continuous Drain (Id) @ 25°C	26A Tc
Gate Charge (Qg) (Max) @ Vgs	56nC @ 10V
Rise Time	33ns
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	21 ns
Turn-Off Delay Time	46 ns
Continuous Drain Current (ID)	26A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.17Ohm
Drain to Source Breakdown Voltage	-200V
Pulsed Drain Current-Max (IDM)	70A
Avalanche Energy Rating (Eas)	1500 mJ
RoHS Status	ROHS3 Compliant