IPP47N10S33AKSA1

new-10%

Manufacturer part number:IPP47N10S33AKSA1

Manufacturer:Infineon Technologies

Description:MOSFET SIPMOS PWR-TRANS 100V 47A

Case Package:SOT-23

Datasheet:IPP47N10S33AKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mounting Type	Through Hole
Package / Case	TO-220-3
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2001
Series	SIPMOS®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	175W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	33m Ω @ 33A, 10V
Vgs(th) (Max) @ Id	4V @ 2mA
Input Capacitance (Ciss) (Max) @ Vds	2500pF @ 25V
Current - Continuous Drain (Id) @ 25°C	47A Tc
Gate Charge (Qg) (Max) @ Vgs	105nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
JEDEC-95 Code	TO-220AB
Drain Current-Max (Abs) (ID)	47A
Drain-source On Resistance-Max	0.033Ohm
Pulsed Drain Current-Max (IDM)	188A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	400 mJ
RoHS Status	RoHS Compliant