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IPP50CN10NGXKSA1

IPP50CN10NGXKSA1

IPP50CN10NGXKSA1

Infineon Technologies

MOSFET N-CH 100V 20A TO-220

SOT-23

IPP50CN10NGXKSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series OptiMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 44W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 44W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 20μA
Input Capacitance (Ciss) (Max) @ Vds 1090pF @ 50V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Rise Time 4ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 3 ns
Continuous Drain Current (ID) 20A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.05Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 80A
Avalanche Energy Rating (Eas) 29 mJ
RoHS Status RoHS Compliant

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