IPP50CN10NGXKSA1

new-10%

Manufacturer part number:IPP50CN10NGXKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 100V 20A TO-220

Case Package:SOT-23

Datasheet:IPP50CN10NGXKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	44W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	44W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	50m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	4V @ 20μA
Input Capacitance (Ciss) (Max) @ Vds	1090pF @ 50V
Current - Continuous Drain (Id) @ 25°C	20A Tc
Gate Charge (Qg) (Max) @ Vgs	16nC @ 10V
Rise Time	4ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	3 ns
Continuous Drain Current (ID)	20A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.05Ohm
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	80A
Avalanche Energy Rating (Eas)	29 mJ
RoHS Status	RoHS Compliant