Name: STW6N120K3
Brand: STMicroelectronics
SKU: STW6N120K3
Availability: InStock

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STW6N120K3

Manufacturer part number:STW6N120K3

Manufacturer:STMicroelectronics

Description:STW6N120K3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STW6N120K3 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	SuperMESH3™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	2.4Ohm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Base Part Number	STW6N
Pin Count	3
Number of Elements	1
Power Dissipation-Max	150W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	150W
Turn On Delay Time	30 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.4 Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id	5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	1050pF @ 100V
Current - Continuous Drain (Id) @ 25°C	6A Tc
Gate Charge (Qg) (Max) @ Vgs	34nC @ 10V
Rise Time	12ns
Drain to Source Voltage (Vdss)	1200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	32 ns
Turn-Off Delay Time	58 ns
Continuous Drain Current (ID)	6A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	6A
Drain to Source Breakdown Voltage	1.2kV
Pulsed Drain Current-Max (IDM)	20A
Nominal Vgs	4 V
Height	20.15mm
Length	15.75mm
Width	5.15mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STW6N120K3 Product Details

Description

The STW6N120K3 is an N-channel 1200 V, 1.95 |? typ., 6 A SuperMESH3? Power MOSFET in TO-3PF, TO-220 and TO-247 packages. These SuperMESH3? Power MOSFETs are the result of upgrades made to the SuperMESH? technology from STMicroelectronics, together with a new, improved vertical structure. These devices are ideal for the most demanding applications thanks to their extremely low on-resistance, superior dynamic performance, and great avalanche capability.