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IPP50R299CPHKSA1

IPP50R299CPHKSA1

IPP50R299CPHKSA1

Infineon Technologies

Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220AB

SOT-23

IPP50R299CPHKSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package PG-TO220-3-1
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Series CoolMOS™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 104W Tc
Power Dissipation 104W
Turn On Delay Time 35 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 299mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id 3.5V @ 440μA
Input Capacitance (Ciss) (Max) @ Vds 1190pF @ 100V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Rise Time 14ns
Drain to Source Voltage (Vdss) 550V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 1.19nF
Rds On Max 299 mΩ
RoHS Status RoHS Compliant

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