IPP50R399CPXKSA1

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IPP50R399CPXKSA1

Manufacturer part number:IPP50R399CPXKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 500V 9A TO-220

Case Package:SOT-23

Datasheet:IPP50R399CPXKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
Series	CoolMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	83W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	83W
Case Connection	ISOLATED
Turn On Delay Time	35 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	399m Ω @ 4.9A, 10V
Vgs(th) (Max) @ Id	3.5V @ 330μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	890pF @ 100V
Current - Continuous Drain (Id) @ 25°C	9A Ta
Gate Charge (Qg) (Max) @ Vgs	4nC @ 10V
Rise Time	14ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	14 ns
Turn-Off Delay Time	80 ns
Continuous Drain Current (ID)	9A
Threshold Voltage	3V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	500V
Drain Current-Max (Abs) (ID)	9A
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	20A
Avalanche Energy Rating (Eas)	215 mJ
Height	15.95mm
Length	10.36mm
Width	4.57mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free