Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IPP60R070CFD7XKSA1

IPP60R070CFD7XKSA1

IPP60R070CFD7XKSA1

Infineon Technologies

MOSFET (Metal Oxide) N-Channel Tube 70m Ω @ 15.1A, 10V ±20V 2721pF @ 400V 67nC @ 10V 650V TO-220-3

SOT-23

IPP60R070CFD7XKSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 18 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Series CoolMOS™ CFD7
Published 2014
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 156W Tc
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 70m Ω @ 15.1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 760μA
Input Capacitance (Ciss) (Max) @ Vds 2721pF @ 400V
Current - Continuous Drain (Id) @ 25°C 31A Tc
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 31A
Drain-source On Resistance-Max 0.07Ohm
Pulsed Drain Current-Max (IDM) 129A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 151 mJ
RoHS StatusROHS3 Compliant
In-Stock:844 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$7.30000$7.3
10$6.56600$65.66
100$5.39910$539.91
500$4.52354$2261.77

IPP60R070CFD7XKSA1 Product Details

IPP60R070CFD7XKSA1 Description

IPP60R070CFD7XKSA1 MOSFET is built on well-established silicon processes that provide designers with a wide selection of devices. IPP60R070CFD7XKSA1 power MOSFET is available in various through-hole and surface-mount packages with standard footprints for designing. Infineon Technologies IPP60R070CFD7XKSA1 is utilized in Server, Telecom, EV-charging, SMPS, PC power.

IPP60R070CFD7XKSA1 Features

Ultra-fast body diode

Lowest FOM RDS(on) x Qg and Eoss

Improved reverse diode dv/dt and dif/dt ruggedness

Best-in-class RDS(on)/package combinations

Best-in-class reverse recovery charge (Qrr)

IPP60R070CFD7XKSA1 Applications

Server

Telecom

EV-charging

SMPS

PC power


Get Subscriber

Enter Your Email Address, Get the Latest News