IPP60R070CFD7XKSA1

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Manufacturer part number:IPP60R070CFD7XKSA1

Manufacturer:Infineon Technologies

Description:MOSFET (Metal Oxide) N-Channel Tube 70m Ω @ 15.1A, 10V ±20V 2721pF @ 400V 67nC @ 10V 650V TO-220-3

Case Package:SOT-23

Datasheet:IPP60R070CFD7XKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mounting Type	Through Hole
Package / Case	TO-220-3
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	CoolMOS™ CFD7
Published	2014
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	156W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	70m Ω @ 15.1A, 10V
Vgs(th) (Max) @ Id	4.5V @ 760μA
Input Capacitance (Ciss) (Max) @ Vds	2721pF @ 400V
Current - Continuous Drain (Id) @ 25°C	31A Tc
Gate Charge (Qg) (Max) @ Vgs	67nC @ 10V
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
JEDEC-95 Code	TO-220AB
Drain Current-Max (Abs) (ID)	31A
Drain-source On Resistance-Max	0.07Ohm
Pulsed Drain Current-Max (IDM)	129A
DS Breakdown Voltage-Min	600V
Avalanche Energy Rating (Eas)	151 mJ
RoHS Status	ROHS3 Compliant