IPP80N04S2H4AKSA2

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Manufacturer part number:IPP80N04S2H4AKSA2

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 40V 80A TO220-3

Case Package:SOT-23

Datasheet:IPP80N04S2H4AKSA2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	OptiMOS™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	300W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	148nC @ 10V
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	80A
JEDEC-95 Code	TO-220AB
Drain-source On Resistance-Max	0.004Ohm
Pulsed Drain Current-Max (IDM)	320A
DS Breakdown Voltage-Min	40V
Avalanche Energy Rating (Eas)	660 mJ
RoHS Status	RoHS Compliant