IPP80N04S403AKSA1

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Manufacturer part number:IPP80N04S403AKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 40V 80A TO220-3-1

Case Package:SOT-23

Datasheet:IPP80N04S403AKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2010
Series	OptiMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	94W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	94W
Turn On Delay Time	14 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3.7m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	4V @ 53μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	5260pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	66nC @ 10V
Rise Time	12ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	16 ns
Continuous Drain Current (ID)	80A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	40V
Drain-source On Resistance-Max	0.0037Ohm
Pulsed Drain Current-Max (IDM)	320A
Avalanche Energy Rating (Eas)	200 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead