IPP80N06S2L09AKSA2

new-10%

Manufacturer part number:IPP80N06S2L09AKSA2

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 55V 80A TO220-3

Case Package:SOT-23

Datasheet:IPP80N06S2L09AKSA2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2006
Series	OptiMOS™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	LOGIC LEVEL COMPATIBLE
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	190W Tc
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	10 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	8.5m Ω @ 52A, 10V
Vgs(th) (Max) @ Id	2V @ 125μA
Input Capacitance (Ciss) (Max) @ Vds	2620pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	105nC @ 10V
Rise Time	19ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	18 ns
Turn-Off Delay Time	53 ns
Continuous Drain Current (ID)	80A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	55V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead