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APT9F100B

APT9F100B

APT9F100B

Microsemi Corporation

MOSFET N-CH 1000V 9A TO-247

SOT-23

APT9F100B Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247 [B]
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
Series POWER MOS 8™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 337W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.6Ohm @ 5A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2606pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
94 $5.58298 $524.80012

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