IPW65R019C7FKSA1

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IPW65R019C7FKSA1

Manufacturer part number:IPW65R019C7FKSA1

Manufacturer:Infineon Technologies

Description:IPW65R019C7FKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IPW65R019C7FKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
Series	CoolMOS™ C7
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	446W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	446W
Case Connection	DRAIN
Turn On Delay Time	30 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	19m Ω @ 58.3A, 10V
Vgs(th) (Max) @ Id	4V @ 2.92mA
Input Capacitance (Ciss) (Max) @ Vds	9900pF @ 400V
Current - Continuous Drain (Id) @ 25°C	75A Tc
Gate Charge (Qg) (Max) @ Vgs	215nC @ 10V
Rise Time	27ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	5 ns
Turn-Off Delay Time	106 ns
Continuous Drain Current (ID)	75A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	650V
Pulsed Drain Current-Max (IDM)	496A
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free