STW3N170 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STW3N170 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mounting Type
Through Hole
Package / Case
TO-247-3
Surface Mount
NO
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
PowerMESH™
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
FET General Purpose Powers
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STW3N
Configuration
Single
Power Dissipation-Max
160mW
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
13 Ω @ 1.3A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1100pF @ 100V
Current - Continuous Drain (Id) @ 25°C
2.6A Tc
Gate Charge (Qg) (Max) @ Vgs
44nC @ 10V
Drain to Source Voltage (Vdss)
1700V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Drain Current-Max (Abs) (ID)
2.3A
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$5.18000
$5.18
30
$4.22400
$126.72
120
$3.87533
$465.0396
510
$3.19537
$1629.6387
STW3N170 Product Details
STW3N170 Description
The STW3N170 is a single power MOSFET made by STMicroelectronics. STW3N170 has a temperature range of -55°C to 150°C TJ and a maximum power dissipation of 160mW. The STMicroelectronics consolidated strip-layout based MESH OVERLAYTM process was used to create this Power MOSFET. As a result, the product performs as well as or better than comparable standard parts from other manufacturers.