IPS06N03LZ G

new-10%

Manufacturer part number:IPS06N03LZ G

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 25V 50A IPAK

Case Package:SOT-23

Datasheet:IPS06N03LZ G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-251-3 Stub Leads, IPak
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	OptiMOS™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	83W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.9m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2V @ 40μA
Input Capacitance (Ciss) (Max) @ Vds	2653pF @ 15V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	22nC @ 5V
Drain to Source Voltage (Vdss)	25V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	50A
Drain-source On Resistance-Max	0.0095Ohm
Pulsed Drain Current-Max (IDM)	350A
DS Breakdown Voltage-Min	25V
Avalanche Energy Rating (Eas)	225 mJ
RoHS Status	RoHS Compliant