IRFR1N60ATR

new-10%

Manufacturer part number:IRFR1N60ATR

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 600V 1.4A DPAK

Case Package:SOT-23

Datasheet:IRFR1N60ATR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Supplier Device Package	D-Pak
Weight	1.437803g
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	36W Tc
Element Configuration	Single
Power Dissipation	36W
Turn On Delay Time	9.8 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	7Ohm @ 840mA, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	229pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.4A Tc
Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V
Rise Time	14ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	18 ns
Continuous Drain Current (ID)	1.4A
Gate to Source Voltage (Vgs)	30V
Input Capacitance	229pF
Drain to Source Resistance	7Ohm
Rds On Max	7 Ω
Height	2.39mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant