SIE836DF-T1-GE3

new-10%

Manufacturer part number:SIE836DF-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 200V 18.3A 104W 130mohm @ 10V

Case Package:SOT-23

Datasheet:SIE836DF-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	10-PolarPAK® (SH)
Number of Pins	10
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	PURE MATTE TIN
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	10
JESD-30 Code	R-PDSO-N4
Number of Elements	1
Power Dissipation-Max	5.2W Ta 104W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	5.2W
Case Connection	DRAIN SOURCE
Turn On Delay Time	15 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	130m Ω @ 4.1A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1200pF @ 100V
Current - Continuous Drain (Id) @ 25°C	18.3A Tc
Gate Charge (Qg) (Max) @ Vgs	41nC @ 10V
Rise Time	10ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	4.1A
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	18.3A
Drain-source On Resistance-Max	0.13Ohm
Drain to Source Breakdown Voltage	200V
Pulsed Drain Current-Max (IDM)	15A
Avalanche Energy Rating (Eas)	1.25 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant