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IRF7464TRPBF

IRF7464TRPBF

IRF7464TRPBF

Infineon Technologies

MOSFET N-CH 200V 1.2A 8-SOIC

SOT-23

IRF7464TRPBF Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 730MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Current Rating 1.2A
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Power Dissipation 2.5W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 730mOhm @ 720mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 280pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.2A Ta
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Rise Time 9.5ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 1.2A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 200V
Input Capacitance 280pF
Drain to Source Resistance 730mOhm
Rds On Max 730 mΩ
RoHS Status RoHS Compliant
Lead Free Lead Free

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