IRFZ46NSPBF

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IRFZ46NSPBF

Manufacturer part number:IRFZ46NSPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 55V 53A D2PAK

Case Package:SOT-23

Datasheet:IRFZ46NSPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Packaging	Tube
Published	2004
Series	HEXFET®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	16.5mOhm
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY
Subcategory	FET General Purpose Power
Voltage - Rated DC	55V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	53A
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	3.8W Ta 107W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	120W
Case Connection	DRAIN
Turn On Delay Time	14 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	16.5m Ω @ 28A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1696pF @ 25V
Current - Continuous Drain (Id) @ 25°C	53A Tc
Gate Charge (Qg) (Max) @ Vgs	72nC @ 10V
Rise Time	76ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	57 ns
Turn-Off Delay Time	52 ns
Continuous Drain Current (ID)	53A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	55V
Dual Supply Voltage	55V
Nominal Vgs	4 V
Height	4.826mm
Length	10.668mm
Width	9.652mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free