IPS50R520CP

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IPS50R520CP

Manufacturer part number:IPS50R520CP

Manufacturer:Infineon Technologies

Description:IPS50R520CP datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IPS50R520CP Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Stub Leads, IPak
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2007
Series	CoolMOS™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	66W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	66W
Turn On Delay Time	35 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	520m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	680pF @ 100V
Current - Continuous Drain (Id) @ 25°C	7.1A Tc
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Rise Time	14ns
Drain to Source Voltage (Vdss)	550V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	17 ns
Turn-Off Delay Time	80 ns
Continuous Drain Current (ID)	7.1A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	500V
Drain-source On Resistance-Max	0.52Ohm
Drain to Source Breakdown Voltage	500V
Nominal Vgs	3 V
RoHS Status	RoHS Compliant