TK56A12N1,S4X Overview

Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4200pF @ 60V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 56A amps.It is [73 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 6.2mOhm.A turn-on delay time of 45 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 120V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

TK56A12N1,S4X Features

a continuous drain current (ID) of 56A
the turn-off delay time is 73 ns
single MOSFETs transistor is 6.2mOhm
a 120V drain to source voltage (Vdss)

TK56A12N1,S4X Applications

There are a lot of Toshiba Semiconductor and Storage
TK56A12N1,S4X applications of single MOSFETs transistors.

• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies