IPP60R125CPXKSA1

new-10%

Manufacturer part number:IPP60R125CPXKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 650V 25A TO-220

Case Package:SOT-23

Datasheet:IPP60R125CPXKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2007
Series	CoolMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	25A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	208W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	208W
Turn On Delay Time	15 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	125m Ω @ 16A, 10V
Vgs(th) (Max) @ Id	3.5V @ 1.1mA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	2500pF @ 100V
Current - Continuous Drain (Id) @ 25°C	25A Tc
Gate Charge (Qg) (Max) @ Vgs	70nC @ 10V
Rise Time	5ns
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	25A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	600V
Pulsed Drain Current-Max (IDM)	82A
Avalanche Energy Rating (Eas)	708 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free