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IPS60R1K0PFD7SAKMA1

  • IPS60R1K0PFD7SAKMA1
  • IPS60R1K0PFD7SAKMA1

IPS60R1K0PFD7SAKMA1

IPS60R1K0PFD7SAKMA1

Infineon Technologies

MOSFET (Metal Oxide) N-Channel 1 Ω @ 1A, 10V ±20V 230pF @ 400V 6nC @ 10V 650V TO-251-3 Stub Leads, IPak

SOT-23

IPS60R1K0PFD7SAKMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-251-3 Stub Leads, IPak
Operating Temperature -40°C~150°C TJ
Series CoolMOS™PFD7
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 26W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 230pF @ 400V
Current - Continuous Drain (Id) @ 25°C 4.7A Tc
Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.02000 $1.02
500 $1.0098 $504.9
1000 $0.9996 $999.6
1500 $0.9894 $1484.1
2000 $0.9792 $1958.4
2500 $0.969 $2422.5
IPS60R1K0PFD7SAKMA1 Product Details

IPS60R1K0PFD7SAKMA1 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 230pF @ 400V.Operating this transistor requires a 650V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IPS60R1K0PFD7SAKMA1 Features


a 650V drain to source voltage (Vdss)


IPS60R1K0PFD7SAKMA1 Applications


There are a lot of Infineon Technologies
IPS60R1K0PFD7SAKMA1 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools

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