FDG330P Description
Fairchild's innovative low voltage PowerTrench technology is used in this P-Channel 1.8V specified MOSFET. It's been designed with battery power management in mind. Lowering conduction loss, improving switching performance, increasing dv/dt rate, and increasing avalanche energy are all goals of this technology.
FDG330P Features
Rqs(on)= 110 m￡2 @ Vgs = -4.5 V
@ Vqs = —2.5 V, Rds(on)= 150
@ Vgs = —1 -8 V, Rds(on)= 215 mQ
Low entry fee
Extremely low Rqsioni with high-performance trench technology
SC70-6 surface mount package is a compact industry standard.
FDG330P Applications
?Battery administration
?Turn on the load switch
