FDG330P

new-10%

Manufacturer part number:FDG330P

Manufacturer:ON Semiconductor

Description:FDG330P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDG330P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	48 Weeks
Lifecycle Status	LAST SHIPMENTS (Last Updated: 2 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	6
Weight	28mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2001
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Voltage - Rated DC	-12V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	-2A
Number of Elements	1
Power Dissipation-Max	750mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	750mW
Turn On Delay Time	10 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	110m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	477pF @ 6V
Current - Continuous Drain (Id) @ 25°C	2A Ta
Gate Charge (Qg) (Max) @ Vgs	7nC @ 4.5V
Rise Time	11ns
Drain to Source Voltage (Vdss)	12V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	11 ns
Turn-Off Delay Time	12 ns
Continuous Drain Current (ID)	2A
Threshold Voltage	-700mV
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	2A
Drain to Source Breakdown Voltage	-12V
Height	1mm
Length	2mm
Width	1.25mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free