FDN339AN

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FDN339AN

Manufacturer part number:FDN339AN

Manufacturer:ON Semiconductor

Description:FDN339AN datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDN339AN Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE (Last Updated: 6 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	30mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1999
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	35mOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	3A
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	500mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	500mW
Turn On Delay Time	8 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	35m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	700pF @ 10V
Current - Continuous Drain (Id) @ 25°C	3A Ta
Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
Rise Time	10ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	18 ns
Continuous Drain Current (ID)	3A
Threshold Voltage	850mV
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	3A
Drain to Source Breakdown Voltage	20V
Dual Supply Voltage	20V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	850 mV
Height	1.22mm
Length	2.92mm
Width	1.4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free