IPS60R600PFD7SAKMA1

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Manufacturer part number:IPS60R600PFD7SAKMA1

Manufacturer:Infineon Technologies

Description:MOSFET (Metal Oxide) N-Channel 600m Ω @ 1.7A, 10V ±20V 344pF @ 400V 8.5nC @ 10V 650V TO-251-3 Stub Leads, IPak

Case Package:SOT-23

Datasheet:IPS60R600PFD7SAKMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-251-3 Stub Leads, IPak
Operating Temperature	-40°C~150°C TJ
Series	CoolMOS™PFD7
Part Status	Active
Moisture Sensitivity Level (MSL)	Not Applicable
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	31W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	600m Ω @ 1.7A, 10V
Vgs(th) (Max) @ Id	4.5V @ 80μA
Input Capacitance (Ciss) (Max) @ Vds	344pF @ 400V
Current - Continuous Drain (Id) @ 25°C	6A Tc
Gate Charge (Qg) (Max) @ Vgs	8.5nC @ 10V
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$1.25000	$1.25
500	$1.2375	$618.75
1000	$1.225	$1225
1500	$1.2125	$1818.75
2000	$1.2	$2400
2500	$1.1875	$2968.75

IPS60R600PFD7SAKMA1 Overview

CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 344pF @ 400V.The transistor must receive a 650V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).