IPS65R1K5CEAKMA1

new-10%

Manufacturer part number:IPS65R1K5CEAKMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 650V TO-251-3

Case Package:SOT-23

Datasheet:IPS65R1K5CEAKMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Stub Leads, IPak
Weight	343.085929mg
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tube
Published	2008
Series	CoolMOS™ CE
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	28W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	7.7 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.5 Ω @ 1A, 10V
Vgs(th) (Max) @ Id	3.5V @ 100μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	225pF @ 100V
Current - Continuous Drain (Id) @ 25°C	3.1A Tc
Gate Charge (Qg) (Max) @ Vgs	10.5nC @ 10V
Rise Time	5.9ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	18.2 ns
Turn-Off Delay Time	33 ns
Continuous Drain Current (ID)	3.1A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	650V
Pulsed Drain Current-Max (IDM)	8.3A
Avalanche Energy Rating (Eas)	26 mJ
RoHS Status	RoHS Compliant
Lead Free	Contains Lead