IPS70R600CEAKMA1

new-10%

Manufacturer part number:IPS70R600CEAKMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 700V 10.5A TO-251

Case Package:SOT-23

Datasheet:IPS70R600CEAKMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Stub Leads, IPak
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tube
Published	2016
Series	CoolMOS™
Pbfree Code	yes
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	86W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	600m Ω @ 1A, 10V
Vgs(th) (Max) @ Id	3.5V @ 0.21mA
Input Capacitance (Ciss) (Max) @ Vds	474pF @ 100V
Current - Continuous Drain (Id) @ 25°C	10.5A Tc
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Drain to Source Voltage (Vdss)	700V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	10.5A
Threshold Voltage	3V
Drain-source On Resistance-Max	0.6Ohm
Pulsed Drain Current-Max (IDM)	18A
DS Breakdown Voltage-Min	700V
Avalanche Energy Rating (Eas)	55 mJ
FET Feature	Super Junction
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant