IRF5305LPBF Description

The IRF5305LPBF power MOSFETs employ tried-and-true silicon manufacturing techniques, providing designers with a broad range of products to serve several applications, including battery-powered devices, DC motors, and inverters, SMPS, lighting, load switches, and illumination. For ease of design, IRF5305LPBF MOSFETs come in a choice of surface mount and through-hole packages with standardized industry footprints.

IRF5305LPBF Features

• Type of Transistor: MOSFET

• Type of Control Channel: P -Channel

• Maximum Power Dissipation (Pd): 110 W

• Maximum Drain-Source Voltage |Vds|: 55 V

• Maximum Gate-Source Voltage |Vgs|: 20 V

• Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

• Maximum Drain Current |Id|: 31 A

• Maximum Junction Temperature (Tj): 175 °C

• Total Gate Charge (Qg): 63 nC

• Rise Time (tr): 66 nS

• Drain-Source Capacitance (Cd): 520 pF

• Maximum Drain-Source On-State Resistance (Rds): 0.06 Ohm

• Package: TO-262

• Planar cell structure for wide SOA

• Optimized for broadest availability from distribution partners

• Product qualification according to JEDEC standard

• Silicon optimized for applications switching below <100kHz

• Industry-standard through-hole power package

• High-current rating

IRF5305LPBF Applications

• Transistors, etc.

• Battery Operated Systems

• Power Supply, Converter Circuits

• Motor Control

• Fast Switching Applications 

• Motor Control Applications