SPP11N60S5HKSA1

new-10%

Manufacturer part number:SPP11N60S5HKSA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220

Case Package:SOT-23

Datasheet:SPP11N60S5HKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2005
Series	CoolMOS™
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	125W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	125W
Case Connection	DRAIN
Turn On Delay Time	130 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	380m Ω @ 7A, 10V
Vgs(th) (Max) @ Id	5.5V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds	1460pF @ 25V
Current - Continuous Drain (Id) @ 25°C	11A Tc
Gate Charge (Qg) (Max) @ Vgs	54nC @ 10V
Rise Time	35ns
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	150 ns
Continuous Drain Current (ID)	11A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.38Ohm
Pulsed Drain Current-Max (IDM)	22A
DS Breakdown Voltage-Min	600V
Avalanche Energy Rating (Eas)	340 mJ
RoHS Status	RoHS Compliant