IPU50R1K4CEAKMA1

new-10%

Manufacturer part number:IPU50R1K4CEAKMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 500V 3.1A TO-251

Case Package:SOT-23

Datasheet:IPU50R1K4CEAKMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
Series	CoolMOS™ CE
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	3
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	42W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.4 Ω @ 900mA, 13V
Vgs(th) (Max) @ Id	3.5V @ 70μA
Input Capacitance (Ciss) (Max) @ Vds	178pF @ 100V
Current - Continuous Drain (Id) @ 25°C	3.1A Tc
Gate Charge (Qg) (Max) @ Vgs	8.2nC @ 10V
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	13V
Vgs (Max)	±20V
Pulsed Drain Current-Max (IDM)	8.8A
DS Breakdown Voltage-Min	500V
Avalanche Energy Rating (Eas)	49 mJ
RoHS Status	ROHS3 Compliant